Semiconductor today

Fabless company Wise Integration of Hyeres, France, together with switched-mode power supply (SMPS) manufacturer Powernet Technologies Corp and power semiconductor firm KEC Corp (both of Seoul, South Korea), have signed a strategic memorandum of understanding (MoU) to co-develop next-generation SMPS solutions designed specifically for AI server applications in South Korea. The partnership aligns with the South Korea’s push to expand AI infrastructure and build out the next generation of high-density data centers...

Cornell University has developed a new transistor architecture for high-power wireless electronics that addresses supply chain vulnerabilities for gallium (‘XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates’, Advanced Electronic Materials, 29 November 2025...

SemiQ Inc of Lake Forest, CA, USA — which designs, develops and manufactures silicon carbide (SiC) power semiconductors and 150mm SiC epitaxial wafers for high-voltage applications — has expanded its third-generation QSiC MOSFET product line, including devices with what is claimed to be an industry-leading current density and thermal resistance...

Infineon Technologies AG of Munich, Germany has launched new packages for its CoolSiC MOSFET 750V G2 technology, engineered to deliver the highest system efficiency and power density in automotive and industrial power conversion applications. This latest innovation is now available in a range of packages, including Q-DPAK and D2PAK, offering a portfolio with typical RDS(on) values up to 60mΩ at 25°C...

VisIC Technologies Ltd of Ness Ziona, Israel – a fabless supplier of power conversion devices based on gallium nitride (GaN) transistors – has announced the second closing of its Round B funding, securing $26m. The round was led by a global semiconductor leader, with Hyundai Motor Company and Kia (HKMC) joining as a strategic investor...

A new UK-Canada technology partnership is building an advanced optical engine designed to make the world’s AI data centers faster, more efficient and more sustainable...

For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month...

Wolfspeed Inc of Durham, NC, USA — which makes silicon carbide (SiC) materials and power semiconductor devices — says that its automotive MOSFETs will power onboard charger systems for Toyota...

Following its entry into the MSCI Canada Small Cap Index on 24 November, specialty semiconductor and performance materials producer 5N Plus Inc (5N+) of Montréal, Québec, Canada has been included in the S&P/TSX Composite Index, effective prior to the open of trading on 22 December...

BluGlass Ltd of Silverwater, Australia — which develops and manufactures gallium nitride (GaN) blue laser diodes based on its proprietary low-temperature, low-hydrogen remote-plasma chemical vapor deposition (RPCVD) technology — has appointed CEO Jim Haden as executive director, subject to obtaining a director’s ID...

Ascent Solar Technologies Inc of Thornton, CO, USA – which designs and makes lightweight, flexible copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) panels that can be integrated into consumer products, off-grid applications and aerospace applications – has closed its private placement for the purchase and sale of an aggregate of 1,025,643 shares of common stock (or pre-funded warrants in lieu thereof), series A warrants to purchase up to 1,025,643 shares and short-term series B warrants to purchase up to 1,025,643 shares at a purchase price of $1.95 per share (or per pre-funded warrant in lieu thereof) and accompanying warrants priced at-the-market under Nasdaq rules...

Navitas Semiconductor Corp of Torrance, CA, USA — which provides GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors — and ASIC/ASSP and power solutions provider Cyient Semiconductor Pte Ltd of Hyderabad, India have announced a strategic long-term partnership intended to advance the adoption of GaN technology in India and establish a complete end-to-end GaN ecosystem...

Ascent Solar Technologies Inc of Thornton, CO, USA – which designs and makes lightweight, flexible copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) panels that can be integrated into consumer products, off-grid applications and aerospace applications – has entered into a definitive agreement for the purchase and sale of an aggregate of 1,025,643 shares of common stock (or pre-funded warrants in lieu thereof), series A warrants to purchase up to 1,025,643 shares of common stock, and short-term series B warrants to purchase up to 1,025,643 shares of common stock at a purchase price of $1.95 per share (or per pre-funded warrant in lieu thereof) and accompanying warrants in a private placement priced at-the-market under Nasdaq rules...

Epiwafer and substrate maker IQE plc of Cardiff, Wales, UK has signed a multi-year extension to its strategic agreement with Lumentum Holdings Inc of San Jose, CA, USA (which designs and makes photonics products for optical networks and lasers for industrial and consumer markets) for the supply of epiwafers supporting advanced sensing technologies...

KnowMade has released its ‘Q3 2025 GaN Patent Monitor’, which highlights major gallium nitride (GaN) innovation trends in third-quarter 2025, the evolving competitive IP landscape, and the technological advances shaping future power and RF electronics...

Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA has released its EliteSiC MOSFETs in the industry-standard T2PAK top-cool package, advancing power packaging for automotive and industrial applications. The new product delivers enhanced thermal performance, reliability and design flexibility for demanding high-power, high-voltage applications for markets including electric vehicles, solar infrastructure, and energy storage systems...

Through its XbloX platform, analog/mixed-signal and specialty foundry X-FAB says that it is offering easy access to a standardized yet flexible set of silicon carbide (SiC) process technologies that accelerate the development of advanced power devices. From rapid prototyping to full production, the modular and fully scalable XbloX platform helps SiC device developers to expedite engineering assessments and technology release, with production starts achieved up to nine months faster than traditional methods, it is reckoned...

Materials, networking and laser technology firm Coherent Corp of Saxonburg, PA, USA says that it has leveraged its 200mm silicon carbide platform expertise to develop a next-generation 300mm silicon carbide solution, engineered to manage rising thermal loads, that meets the accelerating performance and scalability needs of modern data centers. As these systems demand higher power density, faster switching, and superior thermal management, the transition to larger-diameter SiC wafers can unlock major gains in energy efficiency and thermal performance, the firm says...

Japan-based ROHM has begun mass production of the SCT40xxDLL series of silicon carbide (SiC) MOSFETs in TOLL (TO-Leadless) packages. Compared to conventional packages (TO-263-7L) with equivalent voltage ratings and on-resistance, the new packages offer about 39% improved thermal performance, enabling high-power handling despite their compact size and low profile. It is suitable for industrial equipment such as server power supplies and ESS (energy storage systems) where the power density is increasing, and low-profile components are required to enable miniaturized product design...

Infineon Technologies AG of Munich, Germany will supply customized silicon carbide (SiC) power modules to Electreon, a provider of wireless charging solutions for electric vehicles (EVs), for its dynamic in-road charging technology...