Semiconductor today

AXT Inc of Fremont, CA, USA — which makes gallium arsenide (GaAs), indium phosphide (InP) and germanium (Ge) substrates and raw materials at plants in China — says that, in connection with its underwritten public offering of 8,560,311 shares of common stock (completed on 22 April), the underwriters have exercised their over-allotment option to purchase an additional 1,284,046 shares at a price of $64.25, yielding additional gross proceeds of about $82.5m, before deducting underwriting discounts and commissions and other offering expenses...

Aeluma Inc of Goleta, CA, USA — which develops compound semiconductor materials on large-diameter substrates — has been awarded more than $4m in contracts from the US Government to accelerate scaling of its semiconductor heterogeneous integration platform for quantum and high-speed datacom applications...

Aeluma Inc of Goleta, CA, USA — which develops compound semiconductor materials on large-diameter substrates — has received an award from US National Aeronautics and Space Administration (NASA) to advance its integrated quantum dot laser platform for datacom and sensing applications...

Semiconductor materials and technology licensing company Atomera Inc of Los Gatos, CA, USA has expanded its collaboration with Synopsys Inc of Mountain View, CA, USA ― which provides electronic design automation (EDA) software, semiconductor IP and services for chip and electronic system design ― to advance gallium nitride (GaN) device modeling for radio frequency (RF) and power semiconductor applications. The work builds on their long-standing relationship around Synopsys’ Sentaurus TCAD and Atomera’s MSTcad toolset and extends the collaboration into GaN workflows to support bringing higher-quality GaN solutions to market...

The UK’s Compound Semiconductor Applications (CSA) Catapult has published its Annual Report for 24–25, highlighting the impact and value brought to the economy...

AXT Inc of Fremont, CA, USA — which makes gallium arsenide (GaAs), indium phosphide (InP) and germanium (Ge) substrates and raw materials at plants in China — has closed its underwritten public offering of 8,560,311 shares of common stock at $64.25 per share. The firm received total gross proceeds of about $550m, before deducting the underwriting discounts and commissions and other offering expenses...

OEMs across power electronics applications are demanding increased efficiency and power density for power electronics components, while also insisting on solid reliability and device miniaturization. To enable this, wide-bandgap (WBG) semiconductors silicon carbide (SiC) and gallium nitride (GaN) are being adopted across the power electronics market. These WBG power semiconductors support higher-voltage operation and new power architectures across data centers, electric vehicles (EVs) and renewables...

Wolfspeed Inc of Durham, NC, USA — which makes silicon carbide (SiC) materials and power semiconductor devices — has appointed Yasuhisa Harita as regional president for Asia Pacific, effective 1 June. He will be based in Tokyo and lead Wolfspeed’s commercial strategy across Japan, Korea and the ASEAN (Association of Southeast Asian Nations) region, with responsibility for driving revenue growth, enhancing strategic customer relationships, and executing the company’s regional commercial and operational objectives...

CVD Equipment Corp (CVDE) of Central Islip, NY, USA (a designer and maker of chemical vapor deposition, thermal processing, physical vapor transport, gas and chemical delivery control systems, and other equipment and process solutions for developing and manufacturing materials and coatings) has announced the successful growth of single-crystal silicon carbide (SiC) boules grown on CVDE physical vapor transport (PVT) systems and characterized by Stony Brook University (SBU) in support of their new ‘onsemi Research Center for Wide Bandgap Materials’...

Germany-based Bosch Group has started to introduce third-generation silicon carbide (SiC) chips and is supplying samples to global automakers...

Germany-based Bosch Group has started to introduce third-generation silicon carbide (SiC) chips and is supplying samples to global automakers...

Dr Karen Dowling of the Microelectronics Department in the Faculty of Electrical Engineering, Mathematics and Computer Science at TU Delft (Delft Univrsity of Technology) has been awarded an NWO Open Competition ENW-XS grant for her research on materials that can be used in space exploration at extreme temperatures. Specifically, she will investigate the thermoelectric properties of gallium nitride by modelling, fabricating and testing it at temperatures ranging from 500K to 4K...

Dr Karen Dowling of the Microelectronics Department in the Faculty of Electrical Engineering, Mathematics and Computer Science at TU Delft (Delft Univrsity of Technology) has been awarded an NWO Open Competition ENW-XS grant for her research on materials that can be used in space exploration at extreme temperatures. Specifically, she will investigate the thermoelectric properties of gallium nitride by modelling, fabricating and testing it at temperatures ranging from 500K to 4K...

Quinas Technology Ltd of London, UK (which was spun off from Lancaster University in early 2023, and is developing ULTRARAM non-volatile memory technology) has announced a milestone in its R&D program, confirming the use of atomic layer etching (ALE) to fabricate and refine its quantum-engineered device structures at Saudi Arabia’s King Abdullah University of Science and Technology (KAUST) Core Labs (a system of multi-disciplinary and interconnected research laboratories)...

Power semiconductor maker ROHM Semiconductor of Kyoto, Japan has developed the latest device of its EcoSiC series: the 5th Generation silicon carbide (SiC) MOSFETs optimized for high-efficiency power applications. The technology is suitable for automotive electric powertrain systems – such as traction inverters for electric vehicles (xEVs) – as well as power supplies for AI servers and industrial equipment such as data centers...

AXT Inc of Fremont, CA, USA — which makes gallium arsenide (GaAs), indium phosphide (InP) and germanium (Ge) substrates and raw materials at plants in China — has priced its underwritten public offering of 8,560,311 shares of common stock (announced on 20 April) at $64.25 per share...

The latest annual report from CSconnected confirms that the compound semiconductor cluster in South Wales continues to expand its economic contribution, now supporting £436m of gross value-added (GVA) and 3140 jobs across Wales...

AXT Inc of Fremont, CA, USA — which makes gallium arsenide (GaAs), indium phosphide (InP) and germanium (Ge) substrates and raw materials at plants in China — intends to offer and sell shares of common stock in a public offering. In connection with the offering, the firm also expects to grant the underwriters a 30-day overallotment option to purchase up to an additional 15% of the shares offered in the public offering price, minus the underwriting discounts...

InPHRED Inc of Boston, MA, USA (a developer of next-generation photonics solutions for consumer sensing and digital health that was founded in 2023 at Yale University) has announced its formal expansion into the data-center optical interconnect market, extending its nanoporous platform into high-speed connectivity solutions for next-generation AI infrastructure...

Applied Optoelectronics Inc (AOI) of Sugar Land, TX, USA (a designer and manufacturer of optical and hybrid fibre-coaxial networking products for AI data centers, cable TV and broadband fiber access networks) plans to expand its Houston-area footprint through the addition of two adjacent buildings in Pearland, Texas, adding about 388,000ft2 of manufacturing capacity...